Full-band quantum transport simulation based on tight-binding Green´s function method

Modeling and formulation of full-band quantum transport based on a nonequilibrium tight-binding Green´s function method are presented where realistic band structures, evanescent-mode matching, space charge effect, and scattering effects are taken into account. Our results show that current-voltage characteristics of a GaAs/AlAs double-barrier RTD have larger current densities than the conventional single band model since the latter model is found to overestimate the decay constant in the barriers. It should be also noted that the full-band nature and polar optical phonon scattering effects significantly change the results of conventional RTD simulations