DocumentCode :
3250536
Title :
Comparative Study on the Optical Band Edge of ZnO Films with Different Measurement Techniques
Author :
Li, Feng ; Ma, Zhongquan ; Shen, Ling ; He, Bo
Author_Institution :
Dept. of Phys., Shanghai Univ., Shanghai, China
fYear :
2009
fDate :
14-16 Aug. 2009
Firstpage :
1
Lastpage :
4
Abstract :
ZnO films were prepared by radio frequency (rf) magnetron sputtering. The absorption coefficients as a function of incident photon energy were obtained by means of spectroscopic ellipsometer (SE), as well as by using transmission and reflection measurement (T&R). The optical absorption band gap decided by SE is 3.32 eV, while that decided by T&R is 3.26 eV. The difference is ascribed to the fact that SE probes only the surface of films whereas the T&R measurement probes the bulk of the films. The same fact can also be used to explain that, at optical band edge region, the absorption coefficient decided by SE is lower than that decided by T&R. When the incident photon energy is larger than the optical band gap, exitonic transitions in the bulk of the films are used to discuss the change of the absorption coefficient vs. incident photon energy.
Keywords :
II-VI semiconductors; absorption coefficients; ellipsometry; energy gap; light reflection; light transmission; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; SE probes; ZnO; absorption coefficients; electron volt energy 3.26 eV; electron volt energy 3.32 eV; exitonic transitions; incident photon energy; optical absorption band gap; optical band edge; radio frequency magnetron sputtering; reflection measurement; spectroscopic ellipsometer; transmission measurement; zinc oxide film preparation; Electromagnetic wave absorption; Measurement techniques; Optical films; Optical reflection; Photonic band gap; Probes; Radio frequency; Spectroscopy; Sputtering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
Type :
conf
DOI :
10.1109/SOPO.2009.5230095
Filename :
5230095
Link To Document :
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