DocumentCode :
3250570
Title :
Electron beam characteristics of double-gated Si field emitter arrays
Author :
Toma, Y. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Ebara Res. Co. Ltd., Japan
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
9
Lastpage :
13
Abstract :
Double-gate Si field emitter arrays (FEAs) were fabricated in order to generate a focused electron beam and their characteristics were studied. These devices were fabricated by reactive ion etching followed by double successive evaporation of insulating layer and electrode. In these devices, the lower gate is used as an extraction electrode and the upper one is used as an electrostatic focusing lens. The devices presented here have 1.2 /spl mu/m-lower-gate-openings and 2.2-/spl mu/m-upper-gate-openings which are smaller than those previously reported. In this paper, beam characteristics and experimental results of e-beam exposure to a PMMA resist (poly-methyl-methacrylate) are reported.
Keywords :
cold-cathode tubes; electron beams; electron field emission; elemental semiconductors; silicon; sputter etching; vacuum microelectronics; 1.2 micron; 2.2 micron; PMMA resist; Si; cold cathode; double successive evaporation; double-gated field emitter arrays; electron beam characteristics; electrostatic focusing lens; extraction electrode; focused electron beam; lower-gate-openings; reactive ion etching; upper-gate-openings; vacuum microelectronics; Electrodes; Electron beams; Electron emission; Etching; Field emitter arrays; Insulation; Niobium; Phosphors; Scanning electron microscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.486979
Filename :
486979
Link To Document :
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