Electron beam characteristics of double-gated Si field emitter arrays

Double-gate Si field emitter arrays (FEAs) were fabricated in order to generate a focused electron beam and their characteristics were studied. These devices were fabricated by reactive ion etching followed by double successive evaporation of insulating layer and electrode. In these devices, the lower gate is used as an extraction electrode and the upper one is used as an electrostatic focusing lens. The devices presented here have 1.2 /spl mu/m-lower-gate-openings and 2.2-/spl mu/m-upper-gate-openings which are smaller than those previously reported. In this paper, beam characteristics and experimental results of e-beam exposure to a PMMA resist (poly-methyl-methacrylate) are reported.