Title :
Photoluminescence of La-O+-Codoped Silicon-Based Thin-Film Materials
Author :
Yuan Meiling ; Leng Xinli ; Li Chenfa ; Wang Qingnian
Author_Institution :
Dept. of Phys., Nanchang Univ., Nanchang, China
Abstract :
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by La % O+ by ion double implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to different ion implanting sequence of La and O+ and to the temperature of thermal annealing.
Keywords :
annealing; ion implantation; lanthanum; oxygen; photoluminescence; silicon; Si:La,O; blue violet photoluminescence property; ion double implantation; photoluminescence spectra; silicon based thin film material photoluminescence; temperature 293 K to 298 K; thermal annealing; ultraviolet light excitation; Annealing; Atomic force microscopy; Luminescence; Morphology; Partial response channels; Photoluminescence; Semiconductor materials; Semiconductor thin films; Silicon; Temperature measurement;
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
DOI :
10.1109/SOPO.2009.5230097
