Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS devices

Author

Ghetti, A. ; Hamad, A. ; Silverman, P.J. ; Vaidya, H. ; Zhao, N.

Author_Institution

Lucent Technols., Bell Labs., Murray Hill, NJ, USA

fYear

1999

fDate

1999

Firstpage

239

Lastpage

242

Abstract

In this paper we report on the self-consistent modeling and simulation of quantization effects and tunneling current in MOS devices. The simulation model features an original scheme for the self-consistent solution of Poisson and Schrodinger equations and it is used for the extraction of the oxide thickness, by fitting CV curves, and the calculation of the tunneling current. Simulations and experiments are compared for different device types and oxide thicknesses (1.5-6.5 nm) showing good agreement and pointing out the importance of quantum mechanical modeling and the presence of many tunneling mechanisms in ultra-thin oxide MOS devices

Keywords

MOS capacitors; MOSFET; Poisson equation; Schrodinger equation; capacitance; quantum interference phenomena; semiconductor device models; tunnelling; 1.5 to 6.5 nm; C-V curves; MOS capacitors; Poisson equation; Schrodinger equation; nMOS transistors; oxide thickness; quantization effects; quantum mechanical modeling; self-consistent simulation; tunneling current; tunneling mechanisms; ultra-thin gate oxide MOS devices; Charge carrier processes; Doping; Integral equations; MOS devices; Poisson equations; Quantization; Quantum mechanics; Semiconductor process modeling; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799305

Filename

799305