Fabrication and characteristics of micro-vacuum tube of Si-tip FEAs

Author

Huang Zhongping ; Chen Panao ; Zhang Shudan ; Cai Yong ; Wang Baoping

Author_Institution

Lab. of Si Microwave Devices, Nanjing Electron. Devices Inst., China

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

18

Lastpage

22

Abstract

In this paper, we have fabricated successfully Si-tip FEAs on the 3/spl deg/ (100) Si substrate (N type /spl rho/=3/spl sim/5 /spl Omega/cm) using wet etching (EPW and KOH), dry-wet-dry alternating oxidation sharpening at 1050/spl deg/C and phosphorus diffusion technique. The density of tips is up to 15000 tips/mm/sup 2/, and radii of the tips are 30 nm. At 110 V on the grid, currents averaging to 53 nA/tip have been measured. Its diode was also fabricated. The radius of grid hole is 1.5 /spl mu/m, and the height of tips is approximate to 2.1 /spl mu/m for EPI and 4.2 /spl mu/m for KOH. The diode added an external anode. A triode was formed as well. While measuring I-V characteristic of diode, we observed the edge effect of MIS structure. After we changed some masks of the diode, the effect was removed. We observed and analyzed the surface of the FEAs after they were broken down by ion bombarding in an intense electric field and air surrounding.

Keywords

MIS devices; elemental semiconductors; etching; oxidation; silicon; vacuum microelectronics; vacuum tubes; 1.5 micron; 1050 degC; 110 V; 30 nm; FEAs; I-V characteristic; MIS structure; Si; dry-wet-dry alternating oxidation sharpening; edge effect; external anode; field emitter arrays; grid hole radius; intense electric field; ion bombardment; micro-vacuum tube; wet etching; Anisotropic magnetoresistance; Diodes; Electron tubes; Fabrication; Microelectronics; Microwave devices; Microwave theory and techniques; Oxidation; Shape control; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.486981

Filename

486981