• DocumentCode
    3250637
  • Title

    The instability and reliability of silicon field emission array

  • Author

    Qiong Li ; Jingfang Xu ; Haibo Song ; Xinfu Liu

  • Author_Institution
    Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
  • fYear
    1995
  • fDate
    July 30 1995-Aug. 3 1995
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    IS can be classified into four components according to the four types of the time duration observed in a current-time plot. In this paper, we will explicate these components and the possible mechanism responsible for each component. Stability and reliability are two critical parameters when a field emission cathode (FEC) is to be used in a practical device and accepted by the public. These parameters are connected to each other and so it is better to consider them as a whole and begin from the relatively attainable IS property.
  • Keywords
    cathodes; electron field emission; elemental semiconductors; reliability; silicon; stability; vacuum microelectronics; Si; current-time plot; field emission array; field emission cathode; instability; reliability; time duration; vacuum microelectronics; Arc discharges; Cathodes; Etching; Fluctuations; Manufacturing processes; Monitoring; Reliability engineering; Silicon; Stability; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
  • Conference_Location
    Portland, OR, USA
  • Print_ISBN
    0-7803-2143-X
  • Type

    conf

  • DOI
    10.1109/IVMC.1995.486982
  • Filename
    486982