Title :
The instability and reliability of silicon field emission array
Author :
Qiong Li ; Jingfang Xu ; Haibo Song ; Xinfu Liu
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
fDate :
July 30 1995-Aug. 3 1995
Abstract :
IS can be classified into four components according to the four types of the time duration observed in a current-time plot. In this paper, we will explicate these components and the possible mechanism responsible for each component. Stability and reliability are two critical parameters when a field emission cathode (FEC) is to be used in a practical device and accepted by the public. These parameters are connected to each other and so it is better to consider them as a whole and begin from the relatively attainable IS property.
Keywords :
cathodes; electron field emission; elemental semiconductors; reliability; silicon; stability; vacuum microelectronics; Si; current-time plot; field emission array; field emission cathode; instability; reliability; time duration; vacuum microelectronics; Arc discharges; Cathodes; Etching; Fluctuations; Manufacturing processes; Monitoring; Reliability engineering; Silicon; Stability; Testing;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.486982