Title :
Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE
Author :
Scozzoli, L. ; Reggiani, S. ; Rudan, M.
Author_Institution :
DEIS, Bologna Univ., Italy
Abstract :
The spherical-harmonics expansion (SHE) method is employed to solve the Boltzmann transport equation (BTE) in SiO2. Both the polar and nonpolar electron-phonon scattering mechanisms are considered. A number of macroscopic transport properties of electrons in SiO2 are determined in the steady-state regime for an homogeneous bulk structure. The analysis shows good agreement with experiments in the low-field regime
Keywords :
Boltzmann equation; electron mobility; electron-phonon interactions; harmonics; silicon compounds; Boltzmann transport equation; SiO2; drift velocity; electron velocity; homogeneous bulk structure; low-field mobility; macroscopic electron transport properties; nonpolar electron-phonon scattering mechanism; polar electron-phonon scattering mechanism; spherical-harmonics expansion method; steady-state regime; Acoustic scattering; Boltzmann equation; Charge carrier processes; Electron mobility; Interpolation; Monte Carlo methods; Optical scattering; Permittivity; Phonons; Silicon compounds;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799308
