• DocumentCode
    3250667
  • Title

    Measurement of IGBT switching characteristics and loss using coaxial current transformer

  • Author

    Kumar, Vipin ; Reddy, Swetha ; Narayanan, G.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Sci., Bangalore, India
  • fYear
    2012
  • fDate
    6-8 Dec. 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.
  • Keywords
    current transformers; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; IGBT switching; SKM50GB123D; co-axial current transformer; coaxial current transformer; cost-effective experimental setup; device current; device switching times; gate resistance; insulated gate bipolar transistor based power converters; junction temperature; short circuit transients; switching energy losses; Current measurement; Energy loss; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Semiconductor device measurement; Switches; Coaxial current transformer; fault current; insulated gate bipolar transistor (IGBT); power semiconductor device; switching characterization; switching loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics (IICPE), 2012 IEEE 5th India International Conference on
  • Conference_Location
    Delhi
  • ISSN
    2160-3162
  • Print_ISBN
    978-1-4673-0931-8
  • Type

    conf

  • DOI
    10.1109/IICPE.2012.6450478
  • Filename
    6450478