Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction

Author

He Bo ; Zhong Quan Ma ; Xu Jing ; Zhao Lei ; Li Feng ; Shen Cheng ; Zhang Nan Sheng ; Yu Zheng Shan ; Yin Yan Ting

Author_Institution

Dept. of Phys., Shanghai Univ., Shanghai, China

fYear

2009

fDate

14-16 Aug. 2009

Firstpage

1

Lastpage

3

Abstract

ITO/AZO double films were deposited by RF sputtering on p-Si(lOO) substrate to fabricate ITO/AZO/SiCVp-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.

Keywords

Hall effect; electric properties; indium compounds; optical properties; photoelectricity; rectifiers; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; sputtered coatings; Hall effect measurement; ITO-JkJkJk-SiO₂-Si; RF sputtering; UV-Vis spectrophotometer; electrical junction; electrical property; four point probe; optical property; photoelectric effect; rectifying behavior; semiconductor-insulator-semiconductor heterojunction; structural property; Electrodes; Heterojunctions; Indium tin oxide; Optical films; Optical surface waves; Radio frequency; Semiconductor films; Sputtering; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4412-0

Type

conf

DOI

10.1109/SOPO.2009.5230104

Filename

5230104