Title :
Control of emission characteristics of silicon field emitter arrays by ion implantation technique
Author :
Kanemaru, S. ; Hirano, T. ; Tanoue, H. ; Itoh, J.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
July 30 1995-Aug. 3 1995
Abstract :
We report the characteristics of gated Si emitters, which are doped with various impurities by the ion implantation technique. We have found saturation phenomena in Fowler-Nordheim plots in boron doped emitters, which are useful for the decrease of emission fluctuations.
Keywords :
electron field emission; elemental semiconductors; ion implantation; silicon; vacuum microelectronics; Fowler-Nordheim plots; Si:B; emission fluctuations; impurity doping; ion implantation; saturation; silicon field emitter arrays; Annealing; Boron; Doping; Etching; Fabrication; Field emitter arrays; Inorganic materials; Ion implantation; Oxidation; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.486989
