DocumentCode
3250784
Title
Control of emission characteristics of silicon field emitter arrays by ion implantation technique
Author
Kanemaru, S. ; Hirano, T. ; Tanoue, H. ; Itoh, J.
Author_Institution
Electrotech. Lab., Ibaraki, Japan
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
56
Lastpage
59
Abstract
We report the characteristics of gated Si emitters, which are doped with various impurities by the ion implantation technique. We have found saturation phenomena in Fowler-Nordheim plots in boron doped emitters, which are useful for the decrease of emission fluctuations.
Keywords
electron field emission; elemental semiconductors; ion implantation; silicon; vacuum microelectronics; Fowler-Nordheim plots; Si:B; emission fluctuations; impurity doping; ion implantation; saturation; silicon field emitter arrays; Annealing; Boron; Doping; Etching; Fabrication; Field emitter arrays; Inorganic materials; Ion implantation; Oxidation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.486989
Filename
486989
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