DocumentCode
3250808
Title
Simulation of Optical Characteristic for Multi-Active Region RCLEDs
Author
Ma, Jun ; Li, Jianjun
Author_Institution
Beijing Optoelectron. Technol. Lab., Beijing Univ. of Technol., Beijing, China
fYear
2009
fDate
14-16 Aug. 2009
Firstpage
1
Lastpage
4
Abstract
Although the resonant cavity light-emitting diodes (RCLEDs) have better thermal behavior comparing with vertical-cavity surface-emitting lasers (VCSELs), the emission intensity and far-field pattern of RCLEDs still depend on the temperature. A conflict exists between the requirement of high optical intensity and increased temperature. The multi-active region RCLEDs with two MQWs connected by a tunnel junction can solve this problem through the over 100% internal quantum efficiency. In this paper, simulations of the optical field and emitted pattern for multi-active region RCLEDs are calculated based on method of transfer matrix and source term, and comparison with single active region RCLEDs is made as well to give a deep insight of multi-active region RCLEDs.
Keywords
laser cavity resonators; light emitting diodes; surface emitting lasers; emission intensity; multi-active region; resonant cavity light-emitting diodes; tunnel junction; vertical-cavity surface-emitting lasers; Light emitting diodes; Optical attenuators; Optical devices; Optical refraction; Optical variables control; Quantum well devices; Radiative recombination; Stimulated emission; Temperature dependence; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-4412-0
Type
conf
DOI
10.1109/SOPO.2009.5230106
Filename
5230106
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