• DocumentCode
    3250808
  • Title

    Simulation of Optical Characteristic for Multi-Active Region RCLEDs

  • Author

    Ma, Jun ; Li, Jianjun

  • Author_Institution
    Beijing Optoelectron. Technol. Lab., Beijing Univ. of Technol., Beijing, China
  • fYear
    2009
  • fDate
    14-16 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Although the resonant cavity light-emitting diodes (RCLEDs) have better thermal behavior comparing with vertical-cavity surface-emitting lasers (VCSELs), the emission intensity and far-field pattern of RCLEDs still depend on the temperature. A conflict exists between the requirement of high optical intensity and increased temperature. The multi-active region RCLEDs with two MQWs connected by a tunnel junction can solve this problem through the over 100% internal quantum efficiency. In this paper, simulations of the optical field and emitted pattern for multi-active region RCLEDs are calculated based on method of transfer matrix and source term, and comparison with single active region RCLEDs is made as well to give a deep insight of multi-active region RCLEDs.
  • Keywords
    laser cavity resonators; light emitting diodes; surface emitting lasers; emission intensity; multi-active region; resonant cavity light-emitting diodes; tunnel junction; vertical-cavity surface-emitting lasers; Light emitting diodes; Optical attenuators; Optical devices; Optical refraction; Optical variables control; Quantum well devices; Radiative recombination; Stimulated emission; Temperature dependence; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-4412-0
  • Type

    conf

  • DOI
    10.1109/SOPO.2009.5230106
  • Filename
    5230106