A Novel Violet and Blue Enhanced SINP Silicon Photovoltaic Device

Author

He Bo ; Zhong Quan Ma ; Jing, Zu ; Zhao Lei ; Li Feng ; Shen Cheng ; Zhang Nan Sheng ; Yu Zheng Shan ; Yin Yan Ting

Author_Institution

Dept. of Phys., Shanghai Univ., Shanghai, China

fYear

2009

fDate

14-16 Aug. 2009

Firstpage

1

Lastpage

4

Abstract

A novel ITO/SiO₂/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600 nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SIcircldquoNP photovoltaic device were calculated and analyzed in detail.

Keywords

photoelectric devices; photovoltaic effects; silicon; silicon compounds; sputtering; ITO antireflection coating; RF sputtering; current-voltage characteristics; deep junction photovoltaic device; high quantum efficiency; low temperature thermally growth; reflected light; silicon photovoltaic device; spectral response; spectral responsivity; thermal diffusion; ultrathin silicon dioxide; violet and blue enhanced SINP; wavelength 400 nm to 600 nm; Indium tin oxide; Laboratories; Photonic band gap; Photovoltaic systems; Radio frequency; Semiconductor films; Silicon compounds; Solar power generation; Sputtering; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4412-0

Type

conf

DOI

10.1109/SOPO.2009.5230108

Filename

5230108