DocumentCode :
3250886
Title :
On the degradation of organic field-effect transistors
Author :
Pannemann, Ch. ; Diekmann, T. ; Hilleringmann, U.
Author_Institution :
Dept. of Electr. Eng., Paderborn Univ., Germany
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
76
Lastpage :
79
Abstract :
Degradation experiments with organic thin film transistors (OTFT) made of the p-conducting organic semiconductor pentacene revealed a distinct dependence of the electrical transistor parameters to the ambient conditions. A sample that was kept unprotected in dark ambient air conditions was found to be still operating after 9 months of degradation. The on-current was reduced by one order of magnitude per quarter year and the threshold voltage shifted to negative values. To study the influence of the respective gases of the atmosphere, an OTFT was characterized in vacuum conditions and exposed to the distinct gases. The exposure of the unprotected organic film to oxygen resulted in a decreasing on-current, on-off ratio and a positive shift of the threshold voltage, due to scattering centers formed by the reaction of oxygen with the pentacene. Nitrogen caused a decrease of the on-current with reversible tendency when the vacuum conditions were re-established.
Keywords :
field effect transistors; nitrogen; organic semiconductors; oxygen; thin film transistors; electrical transistor parameters; nitrogen; organic field effect transistors; organic thin film transistors; oxygen reaction; p-conducting organic semiconductor pentacene; scattering centers; threshold voltage; Atmosphere; Gases; OFETs; Organic semiconductors; Organic thin film transistors; Pentacene; Scattering; Thermal degradation; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434210
Filename :
1434210
Link To Document :
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