Title :
Calculation of electronic properties of defects in diamond: application to electron emission
Author :
Miskovsky, N.M. ; Cutler, P.H. ; Huang, Z.-H.
Author_Institution :
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Electron field emission from diamond has been known experimentally to yield large currents at low fields. It has been speculated that electron transport through band gap states can be responsible for sustaining such currents. These band gap states may be generated by defects such as vacancies and grain boundaries in CVD diamond films. In this paper the electronic structure of single vacancy defects and H-substitutional single vacancy defects is examined using a tight binding model.
Keywords :
defect states; diamond; electron field emission; tight-binding calculations; vacancies (crystal); C; C:H; H-substitutional defects; band gap states; diamond; electron field emission; electronic structure; tight binding model; vacancy defects; Crystallization; Eigenvalues and eigenfunctions; Electron emission; Equations; Grain boundaries; Orbital calculations; Paramagnetic materials; Photonic band gap; Physics; Stacking;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.486995
