Calculation of electronic properties of defects in diamond: application to electron emission

Author

Miskovsky, N.M. ; Cutler, P.H. ; Huang, Z.-H.

Author_Institution

Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

81

Lastpage

85

Abstract

Electron field emission from diamond has been known experimentally to yield large currents at low fields. It has been speculated that electron transport through band gap states can be responsible for sustaining such currents. These band gap states may be generated by defects such as vacancies and grain boundaries in CVD diamond films. In this paper the electronic structure of single vacancy defects and H-substitutional single vacancy defects is examined using a tight binding model.

Keywords

defect states; diamond; electron field emission; tight-binding calculations; vacancies (crystal); C; C:H; H-substitutional defects; band gap states; diamond; electron field emission; electronic structure; tight binding model; vacancy defects; Crystallization; Eigenvalues and eigenfunctions; Electron emission; Equations; Grain boundaries; Orbital calculations; Paramagnetic materials; Photonic band gap; Physics; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.486995

Filename

486995