DocumentCode :
3250957
Title :
Microscopic characterization of field emitter array structure and work function by scanning Maxwell-stress microscopy
Author :
Itoh, J. ; Nazuka, Y. ; Inoue, T. ; Yokoyama, H. ; Kanemaru, S.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
87
Lastpage :
91
Abstract :
Microscopic images of both the structures and surface potentials of various field emitter arrays (FEAs) were measured by scanning Maxwell-stress microscopy (SMM). Results of SMM measurements clearly showed nanometre-scale irregularities in the structures and structure-related surface potential distributions. From these results, work-function values have been derived for various emitter materials such as Si, Cr, Mo, W, etc. by using an Au film as a reference material; workfunction of Au was assumed as 5.1 eV. Experimental procedure and results are described in detail.
Keywords :
microscopy; scanning probe microscopy; surface potential; vacuum microelectronics; work function; Cr; Mo; Si; W; field emitter array; scanning Maxwell-stress microscopy; structure; surface potential; work function; Chromium; Field emitter arrays; Force measurement; Gold; Laboratories; Niobium; Scanning electron microscopy; Silicon on insulator technology; Spatial resolution; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.486997
Filename :
486997
Link To Document :
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