A, B, and C characterization of gated FEAs for RF device performance

Figures of merit related to electron emission from field emission arrays (FEAs) are dependent upon the Fowler-Nordheim equation, I/sub FN/=AV/sub g//sup 2/ exp(-B/V/sub g/), where the current is a function of the gate potential V/sub g/. A and B may be determined from a seminumerical algorithm and can be determined from a static analysis; the capacitance, C, is fundamentally related to the ability to modulate FEAs for RF power generation. Application of a model that corresponds to the actual geometry of a gated field emitter is expected to provide an accurate comparison with experimentally measured quantities. In this paper an axially symmetric unit cell model consisting of an anode, a gate with hole, and a base plane with a vertical emitter tip protruding is analyzed using boundary element discretization.