DocumentCode
3251062
Title
94 GHz power amplifier using PHEMT technology
Author
Marosi, L. ; Sholley, M. ; Goel, J. ; Faris, A. ; Siddiqui, M. ; Stones, D.I. ; Tan, Kokkiong
Author_Institution
TRW Inc., Redondo Beach, CA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
1597
Abstract
A millimeter wave power amplifier has been developed using power MMICs based on 0.10 micron T-gate pseudomorphic HEMT technology. It uses four MMIC chips in parallel with a low loss 4-way power combiner with two cascaded driver amplifier stages. The amplifier module demonstrated 100 mW output power with more than 32 dB linear gain at 94 GHz. These results are attributed to the excellent device and combiner performance.<>
Keywords
HEMT integrated circuits; cascade networks; driver circuits; field effect MIMIC; millimetre wave amplifiers; millimetre wave devices; power amplifiers; 0.10 micron; 100 mW; 32 dB; 94 GHz; InGaAs-GaAs; InGaAs/GaAs HEMT; PHEMT technology; T-gate pseudomorphic HEMT technology; cascaded driver amplifier stages; low loss 4-way power combiner; millimeter wave power amplifier; power MMICs; Driver circuits; Frequency; Gain; HEMTs; MMICs; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406281
Filename
406281
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