DocumentCode
3251195
Title
Body effect principle applied to RF CMOS circuits
Author
Baptiste, Begleret Jean ; Thierry, Taris ; Herve, L.
Author_Institution
IXL Lab., Talence, France
fYear
2004
fDate
6-8 Dec. 2004
Firstpage
114
Lastpage
117
Abstract
After a theoretical and analytic study of the body effect in MOS transistors, this paper proposes two different approaches of this parasitic phenomenon. Thanks to these models, a design methodology, which takes advantage of the bulk input, can be brought into play. Thus, turning the CMOS drawback into an analog advantage, it gives an efficient alternative to overcome the CMOS VLSI wireless mass-market design constrains. In order to illustrate this advance, two RF building blocks are presented in this paper. Well suited to low power/low voltage applications, these circuits implemented in a 0.18 μm CMOS VLSI technology are well matched to multi-standard architectures and system on chip implementations.
Keywords
CMOS integrated circuits; MOSFET circuits; VLSI; integrated circuit design; integrated circuit modelling; integrated circuit technology; low-power electronics; radiofrequency integrated circuits; system-on-chip; 0.18 micron; CMOS VLSI technology; CMOS VLSI wireless mass market design; MOS transistors; RF CMOS circuits; body effect principle; multistandard architectures; parasitic phenomenon; system on chip; CMOS technology; Circuits; Design methodology; Low voltage; MOSFETs; Radio frequency; Semiconductor device modeling; System-on-a-chip; Turning; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN
0-7803-8656-6
Type
conf
DOI
10.1109/ICM.2004.1434221
Filename
1434221
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