Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

Author

Degraeve, R. ; Pangon, N. ; Kaczer, B. ; Nigam, T. ; Groeseneken, G. ; Naem, A.

Author_Institution

IMEC, Leuven, Belgium

fYear

1999

fDate

14-16 June 1999

Firstpage

59

Lastpage

60

Abstract

A systematic study of oxide reliability is presented in the thickness range 13.8 nm to 2.8 nm. It is demonstrated that (i) the time-to-breakdown should be extrapolated as a function of gate voltage for sub-5 nm oxides, (ii) the temperature acceleration of time-to-breakdown increases drastically with decreasing thickness, and (iii) the combination of increased temperature acceleration, area scaling and low percentage failure rates leads to marginal intrinsic reliability for ultra-thin oxides, severely limiting further downscaling of oxide thickness.

Keywords

MOS integrated circuits; dielectric thin films; electric breakdown; extrapolation; failure analysis; integrated circuit reliability; thermal analysis; 13.8 to 2.8 nm; SiO/sub 2/-Si; area scaling; downscaling; extrapolation; failure rates; gate oxide thickness; gate voltage; intrinsic reliability; oxide breakdown; oxide reliability; oxide thickness; temperature acceleration; time-to-breakdown; time-to-breakdown temperature acceleration; ultra-thin gate oxide reliability; ultra-thin oxides; Acceleration; Breakdown voltage; Capacitors; Dielectric devices; Electric breakdown; Lead compounds; MOS devices; Semiconductor device reliability; Stress; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799339

Filename

799339