DocumentCode
3251336
Title
Device geometry design for a highly robust gated-field-emission triode
Author
Lu, S.-C. ; Huang, C.-M. ; Tsai, J.-H. ; Liu, D. ; Wang, J.-M. ; Peng, J.-G. ; Wang, W.-C. ; Lee, C.-L.
Author_Institution
ERSO/ITRI, Hinchu, China
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
145
Lastpage
148
Abstract
Extending the emitter tip apex above the gate electrode can effectively prevent the arcing induced by local outgas accumulated inside the cavity for short-lived gated-field-emission triodes. The devices with such an extended tip can perform much better in terms of reliability and transconductance.
Keywords
electron field emission; failure analysis; reliability; triodes; vacuum microelectronics; arcing prevention; cavity; device geometry design; emitter tip apex extension; gated-field-emission triode; highly robust triode; local outgas; reliability; tip protrusion; transconductance; Apertures; Cathodes; Dielectrics; Electrodes; Geometry; Histograms; Robustness; Testing; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487012
Filename
487012
Link To Document