0.1 /spl mu/m CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD)

Author

Uchino, T. ; Kiyota, Y. ; Shiba, T.

Author_Institution

Central Res. Lab., Hitachi Ltd, Tokyo, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

93

Lastpage

94

Abstract

We have developed an advanced 0.1 /spl mu/m CMOS technology to form 39 nm deep p-type junctions with sheet resistance as low as 630 /spl Omega//sq using two techniques in combination: rapid vapor-phase doping (RVD) and solid-phase diffusion (SPD). These RVD- and SPD-devices have shown excellent short channel characteristics down to 0.1 /spl mu/m effective channel length and 40% higher maximum drain current compared with conventional devices with ion implanted source/drain extensions (SDEs), and high-speed circuit performance. We have also investigated the effect of the SDE structure on device performance. We found that a gate-extension overlap of 0.05 /spl mu/m enabled excellent DC and high-speed circuit performance in 0.1-/spl mu/m devices.

Keywords

CMOS integrated circuits; chemical interdiffusion; doping profiles; electric resistance; semiconductor doping; 0.05 micron; 0.1 micron; 39 nm; CMOS; CMOS technology; DC circuit performance; RVD/SPD-devices; SDE structure; SDEs; device performance; effective channel length; gate-extension overlap; high-speed circuit performance; ion implanted source/drain extensions; maximum drain current; p-type junctions; rapid vapor-phase doping; sheet resistance; short channel characteristics; solid-phase diffusion; source/drain extensions; CMOS process; Capacitance; Circuit optimization; Degradation; Delay; Glass; Ion implantation; MOSFETs; Silicon; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799356

Filename

799356