Title :
High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectric
Author :
Sekine, K. ; Saito, Y. ; Hirayama, M. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper focuses attention on the electrical properties of ultra-thin silicon nitride films grown by the radial line slot antenna (RLSA) high-density plasma system at 400/spl deg/C as an advanced gate dielectric film. The results show low interface trap and bulk charge density, lower leakage current than jet vapor deposition (JVD) silicon nitride and thermally grown silicon oxide with same equivalent oxide thickness (EOT), high breakdown field intensity, almost no stress-induced leakage current, and very little trap generation, even under high-field stress.
Keywords :
MIS capacitors; dielectric thin films; electric breakdown; electron traps; hole traps; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; interface states; leakage currents; plasma deposition; silicon compounds; 400 C; JVD silicon nitride; MIS capacitors; Si/sub 3/N/sub 4/; breakdown field intensity; bulk charge density; electrical properties; equivalent oxide thickness; gate dielectric film; gate dielectric scaling; high-field stress; interface trap density; jet vapor deposition silicon nitride; leakage current; low temperature growth; radial line slot antenna high-density plasma system; stress-induced leakage current; thermally grown silicon oxide; trap generation; ultra-thin silicon nitride film; ultra-thin silicon nitride films; Chemical vapor deposition; Dielectric films; Electric breakdown; Leakage current; Plasma density; Plasma properties; Semiconductor films; Silicon; Slot antennas; Thermal stresses;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799370
