Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Author

Kimijima, H. ; Ohguro, Tatsuya ; Evans, B. ; Acker, B. ; Bloom, J. ; Mabuchi, H. ; Dim-Lee Kwong ; Morifuji, E. ; Yoshitomi, T. ; Momose, H.S. ; Kinugawa, M. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

119

Lastpage

120

Abstract

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.

Keywords

1/f noise; CMOS analogue integrated circuits; MOSFET; dielectric thin films; field effect MMIC; integrated circuit measurement; integrated circuit noise; microwave field effect transistors; nitridation; oxidation; semiconductor device noise; silicon compounds; 1/f noise; MOSFETs; RF CMOS; SiON-Si; VHP oxynitride gate insulator; analog CMOS; oxynitride gate insulators; vertical high pressure oxynitride gate insulator; CMOS logic circuits; Circuit noise; Degradation; Dielectrics and electrical insulation; MOSFET circuits; Microelectronics; Nitrogen; Radio frequency; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799372

Filename

799372