DocumentCode
3251967
Title
IC´s Performance Improvement and 3D Integration by Layer Transfer Technologies
Author
Aspar, B. ; Lagahe-Blanchard, C.
Author_Institution
TRACIT Technol., Grenoble
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
8
Lastpage
11
Abstract
In microelectronics and MEMS (micro electro mechanical systems) industries, complex structures are required to improve IC\´s performance or to achieve high levels of integration. The level of integration is now so important that we are talking more and more about systems. Different approaches have been developed to obtain such a system. "System in package" relies on the association in a same package of several dies built on different technologies. "System on chip" integrated on single chip different functions or components often built on a similar technology. This limits the possibility of integrating circuits which perform with various technologies. Further integration requires reliable and cost effective solutions for 3D structures allowing ultimately stacking of various IC\´s on a chip. In this context, direct wafer bonding appears as a key generic technology to increase systems integration but also to achieve original structures difficult to obtain by other methods. Transfers of partially or fully processed layers onto different supports offer plenty of solutions for the fabrication of new structures. Recent results obtained by wafer bonding and thinning down techniques are presented in this paper
Keywords
integrated circuit technology; manufacturing processes; system-in-package; wafer bonding; 3D integration; 3D structures; direct wafer bonding; integrated circuit performance improvement; layer transfer technologies; system in package; systems integration; thinning down technique; Costs; Integrated circuit reliability; Integrated circuit technology; Mechanical systems; Microelectronics; Micromechanical devices; Packaging; Stacking; System-on-a-chip; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284406
Filename
4062854
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