Title :
Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization
Author :
Komeda, H. ; Hirayama, M. ; Hirayama, Y. ; Ino, K. ; Kaihara, R. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
A new plasma source called balanced electron drift (BED) magnetron plasma was developed for SiO/sub 2/ contact/via hole etching. E/spl times/B drift of electrons, which is notorious for degrading the uniformity of magnetron plasmas (Sekine et al, 1995), has been completely balanced by applying appropriate 100 MHz RF power to the upper ring electrode. As a result, highly uniform self bias voltage (/spl Delta/V/sub DC/<4 V) and ion flux (/spl Delta/J/sub ion/\n\n\t\t
Keywords :
contact resistance; doping profiles; electrodes; gas mixtures; integrated circuit interconnections; integrated circuit metallisation; ion implantation; plasma materials processing; plasma production; silicon compounds; sputter etching; xenon; 100 MHz; 2.17 angstrom; 200 mm; 4 V; BED etcher; BED magnetron plasma; Si substrate; SiO/sub 2/; SiO/sub 2/ contact/via hole etching; Xe; Xe added gas chemistry; Xe addition; atomic radius; balanced electron drift magnetron plasma; balanced electron drift oxide etcher; balancing RF power; carbon implantation; contact etch; contact metallization; contact resistance; dopant deactivation; dopant deactivation suppression; electron drift; ion implantation; magnetron plasma uniformity; mass number; plasma source; uniform ion flux profile; uniform self bias voltage profile; upper ring electrode; Charge carrier processes; Degradation; Electrons; Etching; Magnetic flux; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Plasma sources; Radio frequency;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799376
