Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETs

This paper compares the scaling characteristics of the three leading multi-gate MOSFET designs, namely the finFET, trigate and omega-gate. A commercial numerical device simulator is employed using a common set of material parameters, device physics models and performance metrics. Examined initially are the short channel effects including the subthreshold slope S and drain induced barrier lowering DIBL as the gate length is scaled down to 20 nm. Subsequently investigated and compared are the effects of scaling of the fin body´s width and height, the oxide thickness and the channel doping. The results suggest that the omega-gate MOSFET shows the best device scaling characteristics