Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/

Author

Chin, A. ; Liao, C.C. ; Lu, C.H. ; Chen, W.J. ; Tsai, C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1999

fDate

14-16 June 1999

Firstpage

135

Lastpage

136

Abstract

We report a very simple process to fabricate Al/sub 2/O/sub 3/ gate dielectric for CMOS technology with k (9.0 to 9.8) greater than Si/sub 3/N/sub 4/. Al/sub 2/O/sub 3/ is formed by direct oxidation from thermally evaporated Al. The 48 /spl Aring/ Al/sub 2/O/sub 3/ has /spl sim/7 orders lower leakage current than equivalent 21 /spl Aring/ SiO/sub 2/. A good Al/sub 2/O/sub 3/-Si interface was evidenced by the low interface density of 1/spl times/10/sup 11/ eVcm/sup -2/ and compatible electron mobility with thermal SiO/sub 2/. Good reliability is measured from the small stress induced leakage current (SILC) after 2.5 V stress for 10,000 s.

Keywords

CMOS integrated circuits; alumina; dielectric thin films; electron mobility; electron traps; integrated circuit reliability; interface states; interface structure; leakage currents; oxidation; permittivity; 10000 s; 2.5 V; 21 angstrom; 48 angstrom; Al; Al/sub 2/O/sub 3/ direct oxidation; Al/sub 2/O/sub 3/ gate dielectric fabrication; Al/sub 2/O/sub 3/-Si; Al/sub 2/O/sub 3/-Si interface; CMOS technology; SILC; Si/sub 3/N/sub 4/; SiO/sub 2/; carrier mobility; electrical stress; electron mobility; high-k Al/sub 2/O/sub 3/ gate dielectric; interface density; interface trap density; leakage current; reliability; stress induced leakage current; thermal SiO/sub 2/; thermally evaporated Al; CMOS process; CMOS technology; Current measurement; Electron mobility; High K dielectric materials; High-K gate dielectrics; Leakage current; Oxidation; Stress measurement; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799380

Filename

799380