Title :
Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si
Author :
Song, S.C. ; Luan, H.F. ; Lee, C.H. ; Mao, A.Y. ; Lee, S.J. ; Gelpey, J. ; Marcus, S. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH/sub 3/ nitridation of Si followed by in-situ N/sub 2/O oxidation (NH/sub 3/+N/sub 2/O process). These films show excellent interface properties, significantly lower leakage current (/spl sim/10/sup 2//spl times/), enhanced reliability, and superior boron diffusion barrier properties compared with SiO/sub 2/ of identical thickness.
Keywords :
ammonia; chemical interdiffusion; dielectric thin films; diffusion barriers; integrated circuit measurement; integrated circuit reliability; interface states; leakage currents; nitridation; nitrogen compounds; oxidation; rapid thermal processing; silicon compounds; N/sub 2/O; NH/sub 3/; NH/sub 3/+N/sub 2/O process; NH/sub 3/-nitrided Si; Si; SiO/sub 2/ thickness; SiO/sub 2/-Si/sub 3/N/sub 4/-Si; boron diffusion barrier properties; in-situ N/sub 2/O oxidation; in-situ rapid thermal N/sub 2/O oxidation; interface properties; leakage current; rapid thermal NH/sub 3/ nitridation; reliability; stack nitride/oxide gate dielectric quality; ultra thin high quality nitride/oxide gate dielectrics; ultra thin stack nitride/oxide gate dielectrics; Boron; Capacitance-voltage characteristics; Dielectric thin films; Electric breakdown; Frequency; Leakage current; MOS devices; Nitrogen; Oxidation; Semiconductor films;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799381
