Title :
Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique
Author :
Eshita, T. ; Nakamura, K. ; Mushiga, M. ; Itho, A. ; Miyagaki, S. ; Yamawaki, H. ; Aoki, M. ; Kishii, S. ; Arimoto, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
0.5 /spl mu/m design rule embedded 64 kbit SBT (SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/) FeRAMs (ferroelectric RAM) are fabricated using a new low temperature SBT deposition technique. The developed deposition technique has successfully lowered SBT crystallization temperature from 800/spl deg/C to 700/spl deg/C, resulting in co-fabrication of FeRAM and fine CMOS logic devices with W plugs. The fabricated devices are proven to be fully functional.
Keywords :
CMOS digital integrated circuits; bismuth compounds; crystallisation; ferroelectric storage; ferroelectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated memory circuits; random-access storage; strontium compounds; 0.5 micron; 64 kbit; 700 C; 800 C; CMOS process; FeRAM; SBT crystallization temperature; SrBi/sub 2/(TaNb)/sub 2/O/sub 9/; W; W plugs; co-fabrication; deposition technique; design rule; embedded SBT FeRAM; embedded SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/ FeRAMs; ferroelectric RAM; fine CMOS logic devices; fully functional devices; low temperature SBT deposition technique; Capacitors; Contact resistance; Crystallization; Ferroelectric films; Leakage current; Nonvolatile memory; Random access memory; Temperature; Turing machines; Voltage;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799382
