Al-interconnect/Cu-plug structure for FeRAM multilevel interconnect

Author

Kishii, S. ; Miyazawa, H. ; Katoh, Y. ; Misawa, N. ; Eshita, T. ; Arimoto, Y.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

143

Lastpage

144

Abstract

An Al-interconnect/Cu-plug structure, whereby a plug is filled by electrochemical deposition (ECD) for FeRAM interconnection, has been developed. Conventionally sputtered Al for current FeRAM devices cannot fill high aspect ratio plugs. A high aspect ratio plug can successfully be filled by ECD Cu and PZT degradation with this structure is much less than that with an Al-interconnect/W-plug structure, which has been widely adopted for DRAM and logic devices.

Keywords

aluminium; copper; electrodeposition; ferroelectric storage; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated memory circuits; Al-Cu; Al-interconnect/Cu-plug structure; Al-interconnect/W-plug structure; DRAM; ECD Cu; FeRAM devices; FeRAM interconnection; FeRAM multilevel interconnect; PZT; PZT degradation; PbZrO3TiO3; electrochemical deposition; high aspect ratio plugs; logic devices; plug filling; sputtered Al; Artificial intelligence; Capacitors; Degradation; Ferroelectric films; Hydrogen; Laboratories; Nonvolatile memory; Plugs; Random access memory; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799384

Filename

799384