Title :
Al-interconnect/Cu-plug structure for FeRAM multilevel interconnect
Author :
Kishii, S. ; Miyazawa, H. ; Katoh, Y. ; Misawa, N. ; Eshita, T. ; Arimoto, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
An Al-interconnect/Cu-plug structure, whereby a plug is filled by electrochemical deposition (ECD) for FeRAM interconnection, has been developed. Conventionally sputtered Al for current FeRAM devices cannot fill high aspect ratio plugs. A high aspect ratio plug can successfully be filled by ECD Cu and PZT degradation with this structure is much less than that with an Al-interconnect/W-plug structure, which has been widely adopted for DRAM and logic devices.
Keywords :
aluminium; copper; electrodeposition; ferroelectric storage; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated memory circuits; Al-Cu; Al-interconnect/Cu-plug structure; Al-interconnect/W-plug structure; DRAM; ECD Cu; FeRAM devices; FeRAM interconnection; FeRAM multilevel interconnect; PZT; PZT degradation; PbZrO3TiO3; electrochemical deposition; high aspect ratio plugs; logic devices; plug filling; sputtered Al; Artificial intelligence; Capacitors; Degradation; Ferroelectric films; Hydrogen; Laboratories; Nonvolatile memory; Plugs; Random access memory; Temperature;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799384
