Field emission of PECVD diamond like carbon thin film flat cathode on microstructured silicon pedestal

Author

Kim, J.M. ; Choo, D.H. ; Park, N.S. ; Choi, J.H. ; Kim, J.W.

Author_Institution

Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

305

Lastpage

309

Abstract

It has been demonstrated that patterned diamond like carbon (DLC) thin film flat cathode deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) shows good field emission characteristics on microstructured silicon pedestal. This device is tested at the chamber pressure of 3.7/spl times/10/sup -6/ torr. At the anode bias of 450 volt, the emission current of 1 /spl mu/A per cathode is observed with bright phosphor flow at the electrical field intensity of 3.5 V//spl mu/m. Simulation and fabrication step show the feasibility of DLC flat cathode for the gated structure applications.

Keywords

carbon; cathodes; diodes; electric fields; electron field emission; plasma CVD; vacuum microelectronics; 3.7E-6 torr; 450 V; C; PECVD; anode bias; chamber pressure; electrical field intensity; electron field emission; emission current; gated structure applications; microstructured pedestal; phosphor flow; thin film flat cathode; Carbon dioxide; Cathodes; Chemical vapor deposition; Diamond-like carbon; Plasma chemistry; Plasma devices; Plasma properties; Semiconductor thin films; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487055

Filename

487055