Title :
Design and fabrication of diamond field emitter structures
Author :
Hong, D. ; Aslam, M.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Two different diamond field emitter structures were designed, fabricated and characterized. Boron-doped p-type crystalline diamond film grown by hot filament chemical vapor deposition (HFCVD) is used as an emitter material in both cases. A five mask fabrication process is employed using diamond film technology compatible with Si integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between anode and cathode. Current versus voltage (I-V) data, measured at 10/sup -6/ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2 MV/cm is approximately 0.1/spl sim/0.5 A/cm/sup 2/.
Keywords :
boron; chemical vapour deposition; current density; diamond; electron field emission; elemental semiconductors; masks; photoresists; semiconductor thin films; vacuum microelectronics; C:B; Fowler-Nordheim field emission behavior; I-V data; current density; diamond; emitter material; field emitter structures; hot filament chemical vapor deposition; multi-mask fabrication process; photoresist; sacrificial layer; vacuum gap; vacuum microelectronics; Chemical technology; Chemical vapor deposition; Crystalline materials; Crystallization; Current measurement; Fabrication; Integrated circuit measurements; Integrated circuit technology; Resists; Semiconductor films;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487058
