Title :
Diamond field emitter triode display cells
Author :
Hong, D. ; Aslam, M.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Prototype diamond field emitter triode display cells are designed, fabricated and characterized. A four mask fabrication process is employed using diamond film technology compatible with silicon integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between gate and cathode. Current versus voltage (I-V) data, measured in a diode configuration at 10/sup -6/ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2 MV/cm is approximately 0.1 A/cm/sup 2/.
Keywords :
diamond; display devices; electron field emission; triodes; vacuum microelectronics; C; Fowler-Nordheim field emission; current density; current voltage characteristics; diamond field emitter triode display cell; diamond film technology; mask fabrication; photoresist sacrificial layer; silicon integrated circuit processing; vacuum gap; Cathodes; Current measurement; Displays; Fabrication; Integrated circuit measurements; Integrated circuit technology; Prototypes; Resists; Semiconductor films; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487060
