DocumentCode
3252296
Title
Diamond field emitter pressure sensor
Author
Hong, D. ; Aslam, M.
Author_Institution
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
335
Lastpage
339
Abstract
We report the design and fabrication technology of a diamond field emitter pressure sensor using a five mask fabrication process. Photoresist is used as a sacrificial layer to produce a vacuum gap between aluminum diaphragm anode and diamond cathode. Current versus voltage (I-V) data, measured at 10/sup -6/ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2 MV/cm is approximately 0.5 A/cm/sup 2/.
Keywords
diamond; electron field emission; microsensors; pressure sensors; vacuum microelectronics; C; Fowler-Nordheim field emission; aluminum diaphragm anode; current density; current voltage characteristics; design; diamond cathode; diamond field emitter pressure sensor; mask fabrication; photoresist sacrificial layer; vacuum gap; Annealing; Anodes; Atmosphere; Atmospheric measurements; Cathodes; Current measurement; Etching; Resists; Scanning electron microscopy; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487061
Filename
487061
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