DocumentCode :
3252316
Title :
Emission stability and high current performance of diamond-coated Si emitters
Author :
Zhirnov, V.V. ; Voronin, A.B. ; Givargizov, E.I. ; Meshcheryakova, A.L.
Author_Institution :
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
340
Lastpage :
344
Abstract :
Silicon field emitters were coated with polycrystalline diamond using hot-filament CVD technique. Maximum emission currents of 300-500 /spl mu/A were achieved from single-tip emitters. Current fluctuations have been found to be between 3 and 16%. Temporal dependence of emission current was studied during 36 h at initial current of 100 /spl mu/A. At the end of the testing 20%-decrease of the current took place. Diamond coated silicon emitters demonstrated favourable emission properties, as compared with uncoated silicon emitters.
Keywords :
CVD coatings; current fluctuations; diamond; electron field emission; silicon; 100 to 500 muA; Si-C; current fluctuations; emission stability; hot-filament CVD; polycrystalline diamond coating; silicon field emitter; single-tip emitter; Coatings; Conductivity; Crystallography; Electric breakdown; Flat panel displays; Prototypes; Silicon; Stability; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487062
Filename :
487062
Link To Document :
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