DocumentCode
3252377
Title
Injection and emission currents of formed MIM systems in a wide temperature range
Author
Khaskelberg, M.B.
Author_Institution
Tomsk State Pedagogical Inst., Russia
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
355
Lastpage
358
Abstract
Conductivity and emission of formed thin film Me-SixNyOz-Me cathodes were studied in the range of temperatures and pressures of 4 K-300 K and 10/sup -8/ torr-10/sup -5/ torr, respectively. The thicknesses of the dielectric film and the top electrode were 40 nm and 10 nm, respectively. The technique for fabricating structures of this type is described in detail elsewhere.
Keywords
MIM devices; cathodes; electroforming; electron emission; 1E-8 to 1E-5 torr; 4 to 300 K; SiNO; conductivity; dielectric film; emission current; formed MIM system; injection current; thin film cathode; Cathodes; Conducting materials; Conductivity; Dielectric materials; Dielectric thin films; Electrodes; Electron traps; Equations; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487065
Filename
487065
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