Novel Process Combining SOI and Strained Circuitry

In this work the authors use the most accurate measurement of strain, which is the direct (%) elongation of the polyimide carrier. This is the only appropriate method of reporting mechanical-stress induced elongation. Improvement in n-type has been calculated to be a maximum at 1.2% biaxial strains (Rim et al., 2002). The authors have observed optima at much lesser strain values by direct measurement. Anisotropic straining can be optimized to further reduce the total 3-D strain; out-of-plane compressive and in-plane tensile strain. In this way the defect problems common in biaxially strained substrates can be avoided