Evaluation of SOI substrates with local or global strain by means ofin-plane XRD measurement

The SOI substrates with local or global strain were evacuated by in-plane XRD (X-ray diffraction) measurement. SOI substrates with local strain, i.e. SOI substrate with SiN capping layer, had good crystal quality with sharp XRD spectra; however the strain was very small. On the contrary, SOI with global strain such as SGOI and SSOI had large strain, but the crystal qualities were very poor showing significantly wide and occasionally multiple peaks in XRD spectra.