DocumentCode
3252450
Title
The investigation of thin-film SOI substrate for the growth of III-nitride
Author
Sun, Jiayin ; Chen, Jing ; Wang, Xi ; Wang, Jianfeng ; Liu, Wei ; Zhu, Jianjun ; Yang, Hui
Author_Institution
State Key Lab. of Functional Mater. for Informatics, Shanghai Inst. of Microsyst. & Inf. Technol.
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
55
Lastpage
56
Abstract
In this paper, the thin-film SOI substrates were used for the MOCVD growth of GaN. The in-situ stress measurement and Raman spectra were performed to characterize the stress distribution in the multi-films. The results show that the compliant SOI substrate can reduce the tensile stress in GaN epilayer by sacrificing the thin top silicon film
Keywords
III-V semiconductors; MOCVD; Raman spectra; gallium compounds; semiconductor thin films; silicon-on-insulator; stress measurement; wide band gap semiconductors; GaN; III-nitride semiconductor; MOCVD growth; Raman spectra; in-situ stress measurement; stress distribution; thin-film SOI substrate; Conference proceedings; Gallium nitride; Laboratories; MOCVD; Semiconductor materials; Silicon; Stress measurement; Substrates; Tensile stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284430
Filename
4062878
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