DocumentCode :
3252528
Title :
Controlled Single-Electron Effects in Multiple-Gate SOI MOSFETs near Room Temperature
Author :
Lee, Wei ; Su, Pin ; Chen, Hou-Yu ; Chang, Chang-Yun ; Su, Ke-Wei ; Liu, Sally ; Yang, Fu-Liang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
63
Lastpage :
64
Abstract :
In this work, we further demonstrate controlled single electron effects in these multiple-gate SOI MOSFETs near room temperature through a comprehensive investigation on the observed CBO, which can be modulated by gate length (Lg), fin-width (Wfin), gate bias (VGS), drain bias (VDS) and body implant (NB)
Keywords :
MOSFET; silicon-on-insulator; single electron transistors; Coulomb blockade oscillations; body implant; controlled single-electron effects; drain bias; fin-width; gate bias; gate length; multiple-gate SOI MOSFET; Conference proceedings; Electrons; Implants; Industrial electronics; MOSFETs; Niobium; Quantum dots; Semiconductor device manufacture; Temperature control; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284434
Filename :
4062882
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3252528
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