• DocumentCode
    3252631
  • Title

    Low Temperature Analog Operation of Triple-Gate FinFETs with HfO2 Dielectrics and TiN Gate Material

  • Author

    Pavanello, M.A. ; Martino, J.A. ; Simoen, Eddy ; Rooyackers, R. ; Collaert, N. ; Claeys, C.

  • Author_Institution
    Centro Universitario da FEI, Sao Bernardo do Campo
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    This paper presents, for the first time, the operation of triple-gate FinFETs with HfO2 gate dielectric, TiN gate and undoped body at cryogenic temperatures. Emphasis for the most common analog figures of merit is given as the intrinsic gain (AV) and the unity gain frequency (fT)
  • Keywords
    MOSFET; dielectric materials; hafnium compounds; titanium compounds; FinFET; HfO2; TiN; cryogenic temperatures; dielectrics material; gate dielectric; Conference proceedings; Dielectric materials; FinFETs; Hafnium oxide; Implants; MOSFETs; Postal services; Read only memory; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284439
  • Filename
    4062887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252631