Double-Gate FET Technology for RF Applications: Device Characteristics and Low Noise Amplifier Design

Author

Bhatia, Karan ; Kim, Keunwoo ; Chuang, Ching-Te ; Rosenbaum, Elyse ; Plouchart, Jean-Olivier ; Floyd, Brian A.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

75

Lastpage

76

Abstract

Previous works have established that double-gate FET (DGFET) technology provides improved digital circuit performance relative to bulk CMOS (Nowak et al., 2004) and (Kim et al., 2005). However, the benefits of DGFET technology for analog/RF circuits have not been thoroughly analyzed. In this work, we use two-dimensional, mixed-mode simulations to compare the performance of low noise amplifier (LNA) circuits built using DGFET and bulk CMOS devices

Keywords

CMOS integrated circuits; digital circuits; field effect transistors; integrated circuit design; low noise amplifiers; 2D simulations; DGFET devices; analog circuits; bulk CMOS; digital circuit; double-gate FET technology; low noise amplifier design; mixed-mode simulations; radiofrequency circuits; Circuit noise; Double-gate FETs; Impedance matching; Inductors; Low-noise amplifiers; MOS devices; Noise measurement; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284440

Filename

4062888