DocumentCode
3252667
Title
Non-heated electron source for vacuum microelectronics devices
Author
Troyan, P.E.
Author_Institution
Tomsk State Acad. of Control Syst. & Radioelectron., Russia
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
413
Lastpage
417
Abstract
Production of efficient cold cathodes able to operate under rugged conditions is a key technology to realize vacuum microelectronics devices. A metal-insulator-metal system with certain thicknesses of a top electrode and insulator is in principle suited to these requirements. The fact that arrays of MIM structures can be readily obtained on large-area glass substrates gives grounds to continue work on developing an emitter array for emitter applications. The simplicity of design and fabrication technique is another advantage offered by MIM cathodes. Considering the fact that their response time is less than 10/sup -8/ s and operating pressure is about 10/sup -5/ torr, MIM cathodes are quite competitive with other types of non-heated emitters. Studies on overcoming the two main disadvantages of these emitters, low values of efficiency (/spl sim/0.5 mA/W) and a lifetime are in progress now. This work is devoted to studies on the mechanism of electroforming of MIM cathodes and increasing efficiency and lifetime of these emitters.
Keywords
MIM devices; cathodes; cold-cathode tubes; electroforming; vacuum microelectronics; 1E-5 torr; cold cathodes; efficiency; electroforming; emitter array; large-area glass substrates; metal-insulator-metal system; nonheated electron source; vacuum microelectronics devices; Cathodes; Electrodes; Electron sources; Fabrication; Glass; Insulation; Metal-insulator structures; Microelectronics; Production; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487078
Filename
487078
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