77 GHz monolithic MMIC Schottky- and PIN-diode switches based on GaAs MESFET and silicon SIMMWIC technology

Author

Klaassen, A. ; Dieudonne, J.-M.

Author_Institution

Daimler-Benz AG, Ulm, Germany

fYear

1995

fDate

16-20 May 1995

Firstpage

1631

Abstract

We report on the design, fabrication and evaluation of 77 GHz monolithically integrated MMIC switches. Single-pole double-throw (SPDT) and single-pole three-throw (SP3T) switches were realized with Schottky diodes in a 0.25 /spl mu/m GaAs MESFET technology. To our knowledge, this is the first fabrication of Schottky diodes as switching elements at W-band. In a silicon SIMMWIC technology SPDT switches were developed with PIN diodes. Insertion losses of 1.5-2.5 dB and isolations better than 20 dB were obtained at 77 GHz for the different switch types. A comparison between the GaAs MESFET and the SIMMWIC technology concerning switch RF-performance, power capability and switching speed is given in this paper.<>

Keywords

MIMIC; Schottky diodes; gallium arsenide; p-i-n diodes; semiconductor switches; silicon; 0.25 micron; 1.5 to 2.5 dB; 77 GHz; EHF; GaAs; GaAs MESFET technology; MM-wave switches; MMIC switches; RF performance; SP3T switches; SPDT switches; Si; Si MIMIC technology; W-band; fabrication; monolithic PIN-diode switches; monolithic Schottky diode switches; power capability; single-pole double-throw type; single-pole three-throw type; switching speed; Fabrication; Gallium arsenide; Isolation technology; MESFETs; MMICs; Millimeter wave technology; Schottky diodes; Silicon; Substrates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406289

Filename

406289