DocumentCode
3252822
Title
Suppresion of Floating Body Effect in Low Leakage FD-SOI with Fluorine Implantation Technology
Author
Domae, Yasuhiro ; Miura, Noriyuki ; Okamura, Tomohiro ; Kumar, Anil ; Ida, Jiro
Author_Institution
Semicond. R&D Div., Oki Electr. Ind. Co., Ltd., Tokyo
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
97
Lastpage
98
Abstract
In this paper, we report a new method of suppressing the floating body effect (FBE) in low leakage FD-SOI transistor. We applied the fluorine implantation for NFET to supress the floating body effect, keeping low leakage current. The Vt shift of ~300mV is observed and drain induced barrier lowering (DIBL) improves ~100mV/V for L=0.14mum
Keywords
field effect transistors; fluorine; ion implantation; leakage currents; semiconductor device manufacture; silicon-on-insulator; FD-SOI transistor; NFET; drain induced barrier lowering; floating body effect suppression; fluorine implantation technology; low leakage current; Annealing; Capacitance-voltage characteristics; Conference proceedings; Degradation; Dielectric films; Fabrication; High K dielectric materials; High-K gate dielectrics; Leakage current; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284451
Filename
4062899
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