DocumentCode :
3252904
Title :
SOI Memories
fYear :
2006
fDate :
Oct. 2006
Firstpage :
102
Lastpage :
102
Keywords :
FinFETs; Laboratories; Random access memory; Read-write memory; Silicon; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY, USA
ISSN :
1078-621X
Print_ISBN :
1-4244-0290-5
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284454
Filename :
4062902
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3252904
