Title :
Electrical breakdown of rare earth oxide insulator thin films in silicon MIS structures
Author :
Rozhkov, V.A. ; Petrov, A.I. ; Goncharov, V.P. ; Trusova, KYu
Author_Institution :
Dept. of Phys., Samara State Univ., Samara, Russia
Abstract :
The rare earth oxides (REO) have emerged as important insulating materials. Thin insulating films are used in a wide variety of components in optical and electronic devices. Thin films of REO exhibit good dielectric properties, thermal and chemical stability. The electrical resistivity of the films is of the order of 1014-1016 Ω cm and the dielectric constant is in the range of 12-13. Knowledge of the breakdown mechanism can be important for the design of thin film capacitors, varactors, transistors and switching elements with memory. In the present report we discuss the results of the dielectric breakdown study of thin Sm2O3 , Lu2O3 and Y2O3 films and propose a model of this process in accordance with which the breakdown process is realized by means of the critical charge accumulation and the corresponding strengthening of the electrical field in the insulator
Keywords :
MIS structures; electric breakdown; insulating thin films; lutetium compounds; samarium compounds; silicon; yttrium compounds; Lu2O3; Si; Si MIS structures; Sm2O3; Y2O3; breakdown mechanism; chemical stability; critical charge accumulation; design; dielectric breakdown; dielectric constant; dielectric properties; electrical breakdown; electrical field; electrical resistivity; rare earth oxide insulator thin films; thermal stability; Chemicals; Dielectric breakdown; Dielectric materials; Dielectric thin films; Dielectrics and electrical insulation; Electric breakdown; Optical devices; Optical films; Optical materials; Thin film transistors;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
DOI :
10.1109/ICSD.1995.523020
