Title :
A graded electron affinity field emission electron source
Author :
Shaw, J.L. ; Jung, T. ; Gray, H.F.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
We report electron affinity measurements suggesting that Ga/sub 1-x/Al/sub x/N has the characteristics needed to create an improved field emitter. By grading the composition from low to high Al mole fraction within a thin layer at the surface of a field emitter, the uniformity, noise, and emission modulation characteristics may be improved.
Keywords :
III-V semiconductors; aluminium compounds; electron affinity; electron field emission; electron sources; gallium compounds; particle sources; vacuum microelectronics; Al mole fraction; Ga/sub 1-x/Al/sub x/N; GaAlN; electron affinity measurements; emission modulation characteristics; field emission electron source; graded electron affinity source; noise; uniformity; Cathodes; Current density; Electrodes; Electron emission; Electron sources; Elementary particle vacuum; Semiconductor device noise; Transconductance; Tunneling; Wire;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487090
