مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3253207

Title :

Multi-Gate Devices

fYear :

2006

fDate :

Oct. 2006

Firstpage :

130

Lastpage :

130

Keywords :

Annealing; CMOS process; Design engineering; FETs; FinFETs; High-K gate dielectrics; Hydrogen; MOSFET circuits; Nanoscale devices; Tin;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

International SOI Conference, 2006 IEEE

Conference_Location :

Niagara Falls, NY, USA

ISSN :

1078-621X

Print_ISBN :

1-4244-0290-5

Electronic_ISBN :

1078-621X

Type :

conf

DOI :

10.1109/SOI.2006.284470

Filename :

4062918

Link To Document :